ماسفت TSM6N50 نوع N-Channel پکیج TO-251
مسافت 500 ولت 5.6 آمپر TSM6N50 نوع N-Channel پکیج TO-251
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-251-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 500 V
Id – Continuous Drain Current: 5.6 A
Rds On – Drain-Source Resistance: 1.15 Ohms
Vgs – Gate-Source Voltage: 30 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 25 nC
Packaging: Reel
Channel Mode: Enhancement
Configuration: Single
Fall Time: 45 ns
Pd – Power Dissipation: 90 W
Rise Time: 40 ns
Factory Pack Quantity: 1875
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 90 ns
Typical Turn-On Delay Time: 20 n
| Package/Case | |
|---|---|
| Type | |
| Continuous Drain Current (Id) | |
| Drain Source Voltage (Vdss) | |
| Power Dissipation (Pd) | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
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