Type Designator: TSM2NB60CH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd: Maximum Power Dissipation: 44 W
|Vds|: Maximum Drain-Source Voltage: 600 V
|Vgs|: Maximum Gate-Source Voltage: 30 V
|Vgs(th)|: Maximum Gate-Threshold Voltage: 4.5 V
|Id: Maximum Drain Current: 2 A
Tj: Maximum Junction Temperature: 150 °C
Qg: Total Gate Charge: 9.4 nC
tr: Rise Time: 9.8 nS
Coss: Output Capacitance: 30.7 pF
Rds: Maximum Drain-Source On-State Resistance: 4.4 Ohm
ماسفت TSM2NB60 نوع N-Channel پکیج TO-251
ماسفت 600 ولت 1 آمپر TSM2NB60 نوع N-Channel
| Manufacturer | |
|---|---|
| Package/Case | |
| Type | |
| Continuous Drain Current (Id) | |
| Drain Source Voltage (Vdss) | |
| Power Dissipation (Pd) | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |





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