Type Designator: IRF9530N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 88 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 38(max) nC
Rise Time (tr): 52 nS
Drain-Source Capacitance (Cd): 340 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
ماسفت IRF9530 نوع P-Channel پکیج TO-220
ماسفت 100 ولت 12 آمپر نوع P-Channel پکیج TO-220
| Manufacturer | |
|---|---|
| Package/Case | |
| Type | |
| Continuous Drain Current (Id) | |
| Drain Source Voltage (Vdss) | |
| Power Dissipation (Pd) | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |





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