Product Category: MOSFETs
Transistor Type: N-Channel
Technology: Si
Mounting Style: SMD/SMT
Package / Case: D2PAK-3 (TO-263-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 57 A
Rds On – Drain-Source Resistance: 23 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 130 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 200 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 47 ns
Forward Transconductance – Min: 32 S
Product Type: MOSFETs
Rise Time: 58 ns
Subcategory: Transistors
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 12 ns

Manufacturer

Package/Case

Type

Continuous Drain Current (Id)

Drain Source Voltage (Vdss)

Power Dissipation (Pd)

Drain Source On Resistance (RDS(on)@Vgs,Id)

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