ماسفت FQP8N60C نوع N-channel پکیج TO-220
231 تومان
Manufacturer: onsemi
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel \
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 7.5 A
Rds On – Drain-Source Resistance: 1.2 Ohms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 28 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 147 W
Channel Mode: Enhancement
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 64.5 ns
Forward Transconductance – Min: 8.7 S
Height: 16.3 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 60.5 ns
Series: FQP8N60C
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 81 ns
Typical Turn-On Delay Time: 16.5 ns
Width: 4.7 mm
| Manufacturer | |
|---|---|
| Package/Case | |
| Type | |
| Continuous Drain Current (Id) | |
| Drain Source Voltage (Vdss) | |
| Power Dissipation (Pd) | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
دیدگاهها
هیچ دیدگاهی برای این محصول نوشته نشده است.