Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 650 V
Id – Continuous Drain Current: 37.9 A
Rds On – Drain-Source Resistance: 99 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4.5 V
Qg – Gate Charge: 24nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 31 W
ماسفت 6R099C6 نوع N-Channel تایوانی مارک Infineon پکیج TO-247
ماسفت 650 ولت 38 آمپر 6R099C6 تایوانی مارک Infineon نوع N-Channel پکیج TO-247
| Manufacturer | |
|---|---|
| Package/Case | |
| Type | |
| Continuous Drain Current (Id) | |
| Drain Source Voltage (Vdss) | |
| Power Dissipation (Pd) | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |




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