Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-251-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 500 V
Id – Continuous Drain Current: 4.4 A
Rds On – Drain-Source Resistance: 1.5 Ohms
Vgs th – Gate-Source Threshold Voltage: 3 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 20 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 70 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Tube
Transistor Type: 1 N-Channel
ماسفت 5ND50 نوع N-Channel پکیج TO-251
ماسفت 500 ولت 4.4 آمپر 5ND50 نوع N-Channel پکیج TO-251
| Manufacturer | |
|---|---|
| Package/Case | |
| Type | |
| Continuous Drain Current (Id) | |
| Drain Source Voltage (Vdss) | |
| Power Dissipation (Pd) | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |





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