Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-251-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 2 A
Rds On – Drain-Source Resistance: 5 Ohms
Vgs – Gate-Source Voltage: 30 V
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 24 ns
Height: 6.22 mm
Length: 6.73 mm
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 44 W
Rise Time: 21 ns
Factory Pack Quantity: 750
Transistor Type: 1 N-Channel

Manufacturer

Package/Case

Type

Continuous Drain Current (Id)

Drain Source Voltage (Vdss)

Power Dissipation (Pd)

Drain Source On Resistance (RDS(on)@Vgs,Id)

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