ماسفت FQP4N60C نوع N-channel پکیج TO-220
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 4.4 A
Rds On – Drain-Source Resistance: 2.2 Ohms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 106 W
Channel Mode: Enhancement
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 35 ns
Forward Transconductance – Min: 4 S
Height: 16.3 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 45 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 13 ns
Width: 4.7 mm
Part # Aliases: FQP4N60C_NL
| Manufacturer | |
|---|---|
| Package/Case | |
| Type | |
| Continuous Drain Current (Id) | |
| Drain Source Voltage (Vdss) | |
| Power Dissipation (Pd) | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
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